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SiC MOSFETs: Advancing Switching Efficiency and Performance

SiC MOSFETs biggest advantage is that it can be used to eliminate tail current during switching; the outcome of which is faster operation, reduced switching loss, and increased stabilization. It also has lower ON resistance and a compact chip size resulting in reduced capacitance and gate charge. SiC demonstrates superior material properties over Silicon (Si) devices. SiC minimal ON-resistance increases, and enables greater package miniaturization and energy savings, as compared to Silicon (Si) devices, in which the ON resistance with increased temperature can more than double.

Silicon Carbide (SiC) MOSFETs as compared to their Silicon counterparts are lower on state resistance and exhibit higher blocking voltage and higher thermal conductivity. SiC MOSFETs and Silicon MOSFETs are designed and essentially processed in similar manner.

SIC Mosfet

BOSCH: Bosch Silicon Carbide Automotive Power MOSFETs

SiC products:

Bosch offers a dual channel SiC trench MOSFET in two voltage classes – 1200V and 750V. They have their own IP-protected SiC-technology, based on Bosch in-house semiconductor production & Market benchmark with lowest room temperature RDS(on) , optimized for overload robustness.

Product lines: bare die, scalable to customer needs and discrete SiC-MOSFETs in SMD & THT package

Bare die products with variable layout & discrete packaged products in two voltage classes:

Bare Die Products

  • 1200V: 10m ohm, 13m ohm, 23m ohm, 31m ohm & 50m ohm
  • 750V: 7m ohm, 10m ohm, 16m ohm, 22m ohm & 35m ohm

SMD TO-263-7 and THT TO-247-3L/4L discrete packaged products for e.g. on-board chargers and dc-dc applications

  • 1200V: 23m ohm, 31m ohm, 50m ohm
  • 750V: 16m ohm, 22m ohm, 36m ohm

Planar Gate Technology:

  • Used in first and current generations of SiC-MOSFETs
  • Larger pitch size – higher RDS(on) x A compared to trench technology

Dual Channel Trench Technology

  • Bosch own SiC process in-house development
  • Very small pitch size, potential to future further scaling 
  • Lower RDS(on) x A compared to planar SiC MOSFET
  • Bosch device concept optimized for reliability 
  • High short circuit robustness
  • 25 years BOSCH experience in trench technology

ROHMSCT Series of 3rd-generation trench-gate type SiC MOSFETs have been recently introduced by ROHM. It is available in 6 variants(650V/1200V). These MOSFETs are ideal for large server power supplies, solar power converters, UPS systems, and electric vehicle charging stations which require high efficiency due to their approximately 50% lower ON-resistance than 2nd-generation planar types.

Littelfuse: Wide-bandgap devices, SiC high voltage MOSFETs and diodes facilitate low switching losses along with low conduction. But to maximize their performance, one should observe the device switching characteristics on a per-cycle basis and not just plug them into your application. 

  • A characterization board designed for SiC devices with minimal parasitic inductances
  • Precise measurement of voltage and current waveforms
  • Careful and optimized gate drive design and layout to minimize noise coupling

Infineon: Infineon has introduced the revolutionary CoolSiC™ MOSFET technology. This enables radically new product designs. CoolSiC™ MOSFET products in 1700 V, 1200 V and 650 V target photovoltaic inverters, motor drives, UPS, battery charging, energy storage, auxiliary power supplies and SMPS. Silicon Carbide CoolSiC™ MOSFET portrays reliability, performance, as well as ease of use for system designers. Silicon Carbide (SiC) ensures flexibility for designers to harness higher levels of efficiency as well as reliability.

Applications – 

  • EV On Board Charger / Off Board Charger
  • General-purpose inverters
  • Motor drives 
  • PV inverters 
  • UPS 
  • DC-DC converters
  • Switching mode power supply 
SiC MOSFETBosch, ROHM, Littelfuse, Infineon

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